5 July 2000 Extension of KrF lithography to sub-50-nm pattern formation
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Abstract
Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 micrometers . This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.
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Shuji Nakao, Jiroh Itoh, Akihiro Nakae, Itaru Kanai, Takayiki Saitoh, Hirosi Matsubara, Kouichirou Tsujita, Ichiriou Arimoto, and Wataru Wakamiya "Extension of KrF lithography to sub-50-nm pattern formation", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389025; https://doi.org/10.1117/12.389025
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