5 July 2000 Extension of KrF lithography to sub-50-nm pattern formation
Author Affiliations +
Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 micrometers . This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuji Nakao, Jiroh Itoh, Akihiro Nakae, Itaru Kanai, Takayiki Saitoh, Hirosi Matsubara, Kouichirou Tsujita, Ichiriou Arimoto, and Wataru Wakamiya "Extension of KrF lithography to sub-50-nm pattern formation", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389025; https://doi.org/10.1117/12.389025

Back to Top