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5 July 2000 Feasibility study of an embedded transparent phase-shifting mask in ArF lithography
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We have proposed the combination of the new transparent phase-shifting mask with the off-axis illumination, and have carried out the feasibility study on it, for the objective of the extension in optical lithography. We have demonstrated that 0.10micrometers lien pattern fabrication is achieved with sufficient process margin by applying the transparent phase-shifting mask to ArF lithography. Especially, this new technology is characterized that the resolution of isolated lien pattern in more strongly enhanced as compared with other resolution enhancement technologies, the combination of the attenuated phase- shifting mask with the off-axis illumination and the alternating phase-shifting mask technology. However, the application of the transparent phase-shifting mask is restricted within limited pattern size less than about 0.15micrometers . For applying this new technology to actual logic device patterns, we have also proposed the embedded transparent phase-shifting mask in which the transparent phase shifter and the opaque layer are assigned to the fine features and the larger features, respectively. In the next stage, we will study the application to logic device patterns.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Matsuo, Tohru Ogawa, and Hiroaki Morimoto "Feasibility study of an embedded transparent phase-shifting mask in ArF lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);

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