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5 July 2000 IDEAL double exposure method for polylevel structures
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Abstract
IDEAL has been proposed as a new double exposure technique to realize k1 equals 0.3 optical lithography. We have applied this technique to complicated 2D structures that can be found in a poly-level of a memory test pattern device. Experimental results showed that IDEAL has a quite large process window also on structured substrate such as SiN and poly-silicon. For the CD target of 0.13 micrometers , exposure latitude larger than 10 percent with a depth of focus larger than 0.5 micrometers was achieved by IDEAL exposure. The alignment latitude of the two reticles used to compose the final lithographic image was larger than +/- 40 nm, moreover line-end shortening effects are also improved by IDEAL exposure.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carmelo Romeo, Paolo Canestrari, Antonio Fiorino, Masanobu Hasegawa, Kenji Saitoh, and Akiyoshi Suzuki "IDEAL double exposure method for polylevel structures", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389013
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