Improved process latitude photolithography 0.18-um technology using multiple focal planes

Anne-Sophie Callec; Jean-Paul E. Chollet

doi:10.1117/12.388945

5 July 2000 Improved process latitude photolithography 0.18-μm technology using multiple focal planes

Anne-Sophie Callec, Jean-Paul E. Chollet

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388945
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The method used in optical photolithography called 'focus latitude enhancement exposure' studied with i-line resists, also makes possible to increase the Depth Of Focus and exposure latitude with Deep-UV resist for all lines and hole patterns of about 280 nm.

Citation Download Citation

Anne-Sophie Callec and Jean-Paul E. Chollet "Improved process latitude photolithography 0.18-μm technology using multiple focal planes", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388945

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