5 July 2000 Improvement of CD control and resolution by optimizing inorganic ARC process
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Abstract
The comparison of organic and inorganic bottom antireflective coating (BARC) discussed, especially about resolution improvement considering dry etching characteristics of ARC. The target was 0.2micrometers gate layer with shallow trench isolation and KrF negative resist process was used. By evaluation of etching characteristics for hard mask, it was found that etching critical dimension (CD) shift from resist pattern was almost determined by neighboring space width. The CD shift of isolated line pattern was more than +50nm for organic ARC. When CD shift should be corrected accurately by mask correction, the problem occurred that depth of focus of resist pattern was extremely small to compensate such large CD shift. Inorganic ARC could reduce the CD shift of isolated line pattern by 15nm compared to organic ARC. Although CD-DOF for isolated line was deteriorated after etching in the case of organic ARC, that was maintained in the case of inorganic ARC. Organic ARC was superior for the resist line width control on substrate step and inorganic ARC was superior for line end shortening of resist pattern, while both ARCs showed nearly equal performance after etching. Considering the stage of post-etching, inorganic ARC improved resolution of 0.2micrometers isolated pattern by 20-30 nm and DOF with no worse line width control than organic ARC.
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Atsumi Yamaguchi, Atsushi Ueno, Kouichirou Tsujita, "Improvement of CD control and resolution by optimizing inorganic ARC process", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389086; https://doi.org/10.1117/12.389086
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