5 July 2000 Influence of film stress on advanced optical reticle distortions
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Proceedings Volume 4000, Optical Microlithography XIII; (2000); doi: 10.1117/12.389008
Event: Microlithography 2000, 2000, Santa Clara, CA, United States
Abstract
As optical lithography error budgets on pattern placement become more and more stringent for sub-130 nm technology, all mask-related distortions must be quantified, controlled, and minimized. To optimize the mask fabrication process, it is essential to identify the stress magnitudes of the thin films and determine the resulting effect on pattern placement errors. Experiments utilizing surface mapping technique have been used to quantify the stress magnitudes of current thin film deposition parameters used in photomask blank fabrication. The effect of pattern transfer on image placement errors was determined experimentally for an anisotropic metrology pattern. The stress magnitudes obtained in the thin film stress measurements were incorporated into a finite element model that simulated the mechanical effect of pattern transfer utilizing equivalent modeling techniques. Analytical, experimental, and finite element procedures have been integrated to accurately quantify thin film stress magnitudes and the corresponding pattern transfer distortions.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lowell K. Siewert, Andrew R. Mikkelson, Roxann L. Engelstad, Edward G. Lovell, Mark E. Mason, R. Scott Mackay, "Influence of film stress on advanced optical reticle distortions", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389008; https://doi.org/10.1117/12.389008
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KEYWORDS
Reticles

Etching

Thin films

Photomasks

Metrology

Chromium

Optical alignment

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