5 July 2000 Influence of resist process on the best focus shift due to lens spherical aberration
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Abstract
The influence of spherical aberration on imaging performance was evaluated by resist simulation for various resist thicknesses and other resist parameters. The best focus variation in terms of pattern size in L and S was not appropriate as a lithographic criterion because it varied not only with pattern size but also with resist characteristics and thickness. General rules for the best focus of L and S based on CD-defocus characteristics are proposed. The lithographic performance represented by the CD uniformity and the best focus variation of isolated patterns were predicted approximately from the result of aerial image calculation for ideal resist performance. In conclusion, the reduction in spherical aberration that leads to improved CD accuracy is not always achieved by the decrease in best focus shift.
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Seiji Matsuura, Seiji Matsuura, Takayuki Uchiyama, Takayuki Uchiyama, Hiroyoshi Tanabe, Hiroyoshi Tanabe, "Influence of resist process on the best focus shift due to lens spherical aberration", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388968; https://doi.org/10.1117/12.388968
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