Interference lithography at 157 nm

Michael Switkes; Theodore M. Bloomstein; Mordechai Rothschild

doi:10.1117/12.389007

5 July 2000 Interference lithography at 157 nm

Michael Switkes, Theodore M. Bloomstein, Mordechai Rothschild

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389007
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A 157nm interference lithography system which is capable of patterning features at sub-100-nm pitch has been implemented. Initial results demonstrate approximately 50 nm line and space patterns exposed in a commercial deep-UV photoresists. Little line edge roughness is observed, indicating that the intrinsic properties of the resist may meet CD-control requirements to at least 50 nm. In addition, this system may be used to measure the spatial coherence of the 157-nm F₂ laser source. Preliminary estimates show that the coherence length is approximately 40 micrometers .

Citation Download Citation

Michael Switkes, Theodore M. Bloomstein, and Mordechai Rothschild "Interference lithography at 157 nm", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389007

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