Laser spectrum line shape metrology at 193 nm

Alexander I. Ershov; Gunasiri G. Padmabandu; Jeremy D. Tyler; Palash P. Das

doi:10.1117/12.388978

5 July 2000 Laser spectrum line shape metrology at 193 nm

Alexander I. Ershov, Gunasiri G. Padmabandu, Jeremy D. Tyler, Palash P. Das

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388978
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The spectral shape requirements for an ArF laser for 193 nm microlithography are expected to be about 2X tighter than at 248nm. This is in part due to the dispersion of fused silica and CaD₂ at 193nm and in part due to the push by the lens designers towards higher NA lenses. However, unlike 248nm, it is likely that the process engineer may not be satisfied with simple spectral bandwidth measurements of Full-Width-At-Half-Maximum. Instead, the knowledge of the compete spectral shape may be required, since it is the total shape that has an impact on the lens performance. This requirement may have significant impact on corresponding metrology tools. These tools should be either portable or built into the laser. They should be able to provide continuous feedback to the process engineer as far as the lens performance is considered. Present paper discuses recent developments in 193nm metrology which can be implemented as a part of laser on-board diagnostics or as a field service tool, and is capable of accurately measuring the laser spectrum shape. This information, together with propriety lens parameters, will allow process engineer to accurately evaluate the aberrations due to the laser line shape.

Citation Download Citation

Alexander I. Ershov, Gunasiri G. Padmabandu, Jeremy D. Tyler, and Palash P. Das "Laser spectrum line shape metrology at 193 nm", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388978

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