5 July 2000 Mask error factor impact on the 130-nm node
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Abstract
The aggressive schedule for downscaling of gate dimensions and need for tight CD control for the 130nm node has created the need to seriously consider the use of a Levenson phase shift mask with 248nm lithography tools. The improvements in exposure latitude and depth of focus of strong phase shift over binary patterning are well known and have been clearly demonstrated. What is less well understood is the impact of the mask error factor.
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John N. Randall, John N. Randall, Christopher C. Baum, Christopher C. Baum, Keeho Kim, Keeho Kim, Mark E. Mason, Mark E. Mason, } "Mask error factor impact on the 130-nm node", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389049; https://doi.org/10.1117/12.389049
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