5 July 2000 New pattern generation system based on i-line stepper: photomask repeater
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Abstract
New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitching technology has been developed. Critical dimension error in the region where shots are stitched is the key issue of this technology. Quantification of critical dimension deviation induced by shot misplacement was carried out by calculation. Introducing exposure dose gradation, it was reduced less than 1.5nm. Form measurements of real exposed mask this technique proved to be able to stitch shots seamlessly. Major two specifications, pattern placement accuracy and critical dimension uniformity, were evaluated. Both specifications required for 150nm photomask were fully satisfied. Availability of the photomask repeater to memory device and system on chip is discussed.
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Suigen Kyoh, Suigen Kyoh, Soichi Inoue, Soichi Inoue, Iwao Higashikawa, Iwao Higashikawa, Ichiro Mori, Ichiro Mori, Katsuya Okumura, Katsuya Okumura, Nobuyuki Irie, Nobuyuki Irie, Koji Muramatsu, Koji Muramatsu, Nobutaka Magome, Nobutaka Magome, } "New pattern generation system based on i-line stepper: photomask repeater", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389056; https://doi.org/10.1117/12.389056
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