5 July 2000 OPC beyond 0.18 μm: OPC on PSM gates
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For lithography smaller that 180 nm using 248 nm steppers, phase-shifting lithography is becoming more routine. However, when applied to very small dimensions, OPC effects begin to become pronounced. We have design a new phase- shifting test structure for reticles to address these phase shifting distortions, and report on its use.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin M. Schellenberg, Franklin M. Schellenberg, Olivier Toublan, Olivier Toublan, Nicolas B. Cobb, Nicolas B. Cobb, Emile Y. Sahouria, Emile Y. Sahouria, Greg P. Hughes, Greg P. Hughes, Susan S. MacDonald, Susan S. MacDonald, Craig A. West, Craig A. West, } "OPC beyond 0.18 μm: OPC on PSM gates", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388942; https://doi.org/10.1117/12.388942


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