5 July 2000 Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performance
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Abstract
A practical optical proximity correction (OPC) method is introduced and applied to 0.25 micrometers DRAM process in order to reduce the gate critical dimension (CD) variations across the exposure field. A variable threshold model is made and evaluated to enhance the model accuracy. This model takes maximum 2X computation time compared with the constant threshold model. The proposed OPC methodology considering both process effects and mask manufacturability simultaneously is discussed in view of the gate line CD variation. The correction segments of a pattern are optimized considering mask manufacturability. Patterns with jog sizes larger than 0.4 micrometers are inspect able with KLA35UV. The OPC results exhibited 60 percent reduction of gate CD variation, 90 percent matching of mean-to-target CD, and 15 percent improvement of circuit performance.
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Chul-Hong Park, Chul-Hong Park, Sang-Uhk Rhie, Sang-Uhk Rhie, Ji-Hyeon Choi, Ji-Hyeon Choi, Ji-Soong Park, Ji-Soong Park, Hyeong-Weon Seo, Hyeong-Weon Seo, Yoo-Hyon Kim, Yoo-Hyon Kim, Young-Kwan Park, Young-Kwan Park, Woo-Sung Han, Woo-Sung Han, Won-Seong Lee, Won-Seong Lee, Jeong-Taek Kong, Jeong-Taek Kong, } "Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performance", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388939; https://doi.org/10.1117/12.388939
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