5 July 2000 Output stabilization technology with chemical impurity control on ArF excimer laser
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Based on accurate gas analysis technology it has been found that both gas purity and gas control are key factors in optimizing the performance of ArF excimer lasers. The study of the behavior of gas impurities inside the laser chamber showed that impurities built up not only during laser operation but also during rest periods. In-situ gas analysis and controlled impurity gas addition clarified that hydrogen fluoride and oxygen impurities, are the main causes for the decrease of laser output energy. Based on our experiments, a modified gas composition was chosen for the ArF laser that significantly improved its output characteristics.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Sumitani, Akira Sumitani, Satoshi Andou, Satoshi Andou, Takehito Watanabe, Takehito Watanabe, Masayuki Konishi, Masayuki Konishi, Suguru Egawa, Suguru Egawa, Ikuo Uchino, Ikuo Uchino, Takeshi Ohta, Takeshi Ohta, Katsutomo Terashima, Katsutomo Terashima, Natsushi Suzuki, Natsushi Suzuki, Tatsuo Enami, Tatsuo Enami, Hakaru Mizoguchi, Hakaru Mizoguchi, } "Output stabilization technology with chemical impurity control on ArF excimer laser", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388980; https://doi.org/10.1117/12.388980

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