5 July 2000 Overlay performance in advanced processes
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Proceedings Volume 4000, Optical Microlithography XIII; (2000); doi: 10.1117/12.389040
Event: Microlithography 2000, 2000, Santa Clara, CA, United States
Abstract
To guarantee less than 45 nm product overlay required for the 130 nm IC technology node a key in lithographic tools is a sophisticated wafer alignment sensor that is able to deal with the influences of new, advanced IC processing. To prove that product overlay performance in this range is achievable, overlay results are presented that confirm the operational concept of the new ATHENA alignment sensor on various advanced processes in both front-end as well as back-end-of-line. In particular, the influences related to Chemical Mechanical Polishing (CMP) have been studied. The robustness of the system to large variations of W-CMP process parameters is highlighted. It is argued that full exploitation of the flexibility of the sensor will allow further optimization of its operation in actual production environments and that a product overlay of 35 nm is feasible.
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Frank Bornebroek, Jaap Burghoorn, James S. Greeneich, Henry J. L. Megens, Danu Satriasaputra, Geert Simons, Sunny Stalnaker, Bert Koek, "Overlay performance in advanced processes", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389040; https://doi.org/10.1117/12.389040
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KEYWORDS
Semiconducting wafers

Optical alignment

Overlay metrology

Sensors

Diffraction

Chemical mechanical planarization

Metals

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