Phase aware proximity correction for advanced masks

Olivier Toublan; Emile Y. Sahouria; Nicolas B. Cobb; Thuy Do; Tom Donnelly; Yuri Granik; Franklin M. Schellenberg; Patrick Schiavone

doi:10.1117/12.388972

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5 July 2000 Phase aware proximity correction for advanced masks

Olivier Toublan, Emile Y. Sahouria, Nicolas B. Cobb, Thuy Do, Tom Donnelly, Yuri Granik, Franklin M. Schellenberg, Patrick Schiavone

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Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388972
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In this paper we describe the use of sparse aerial image simulation coupled with process simulation, using the variable threshold resist (VTR) model, to do optical and process proximity correction (OPC) on phase shift masks (PSM). We will describe the OPC of PSM, including attenuated PSM, clear field PSM, and double exposure PSM. We will explain the method used to perform such OPC and show examples of critical dimension control improvements generated from such a technique. Simulations, PSM assignment and model based OPC corrections are performed with Calibre Workbench, Calibre DRC, Calibre PSMgate and Calibre OPCpro tools from Mentor Graphics. In conclusion we will show that PSM techniques need to be corrected by a phase aware proximity correction tool in order to achieve both pattern fidelity as well as small feature size on the wafer in a production environment.

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Olivier Toublan, Emile Y. Sahouria, Nicolas B. Cobb, Thuy Do, Tom Donnelly, Yuri Granik, Franklin M. Schellenberg, and Patrick Schiavone "Phase aware proximity correction for advanced masks", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388972

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