5 July 2000 Simulation-based proximity correction in high-volume DRAM production
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Abstract
Simulation-based optical proximity correction (OPC) is applied to print the gate level of a state-of-the-art, high- volume DRAM technology. Using 248 nm lithography, critical structures down to 170nm are printed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Werner Fischer, Ines Anke, Giorgio Schweeger, Joerg Thiele, "Simulation-based proximity correction in high-volume DRAM production", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389078; https://doi.org/10.1117/12.389078
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