Translator Disclaimer
Paper
5 July 2000 Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROM
Author Affiliations +
Abstract
Among the non-volatize memory family, Mask ROM is the most cost competed product that wildly adopted in data storage application. The mask ROM based on the 0.18 um technology generation is pushed to production in most of the advanced fabs that use KrF lithography. There are two critical steps in the process flow layer. Most of the existing studies deal with the small geometry poly patterning. The other challenge is to deal with random code implant layer. However, few studies have been done on the related problems.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Ping Chen, Shun-Li Lin, and Ta-Hung Yang "Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROM", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389089
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top