5 July 2000 Understanding the parameters for strong phase-shift mask lithography
Author Affiliations +
Abstract
In this paper we analyze selective alternating PSM synthesis and OPC modeling parameters, taking into account lithographic constraints to PSM conformance. The results shown include phase and trim regions size and shape impact on the images printed on wafers at optimum conditions and through focus, at ideal as well as in the presence of errors in phase and transmission due to mask manufacturing.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Tritchkov, Alexander V. Tritchkov, John P. Stirniman, John P. Stirniman, Jeffrey P. Mayhew, Jeffrey P. Mayhew, Michael L. Rieger, Michael L. Rieger, } "Understanding the parameters for strong phase-shift mask lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388970; https://doi.org/10.1117/12.388970
PROCEEDINGS
11 PAGES


SHARE
Back to Top