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20 March 2000 Autodyne detection in semiconductor-laser-generated relaxation oscillations
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Abstract
The effect of autodyne detection in semiconductor lasers generated relaxation oscillations has been investigated. The computer simulation of the experimentally observed blurring of phase trajectories on its certain parts has been made with the help of numerical calculation of the system of differential equations for semiconductor laser with vibrating external reflector. The relation of the blurring of trajectories with generation of relaxation oscillations on these parts has been found. It has been shown that semiconductor laser in the generation regime of relaxation oscillations has the high sensitivity to the fluctuations of parameters of external optical feedback and to the non- stability of power supply.
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Mihail Yu. Kalinkin, Dmitry Alexandrov Usanov, and Anatoli V. Skripal "Autodyne detection in semiconductor-laser-generated relaxation oscillations", Proc. SPIE 4002, Saratov Fall Meeting '99: Laser Physics and Spectroscopy, (20 March 2000); https://doi.org/10.1117/12.380113
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