16 August 2000 High-speed pn-CCDs as imaging detectors from 200 to 1200 nm
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Abstract
Fully depleted silicon pn-CCDs with an active thickness of 300 micrometers exhibit a quantum efficiency of 90 percent at a wavelength of 1 micrometers in the near IR. The multi-parallel readout architecture allows for a frame time shorter than 2 ms for a device having a format of 256 by 256 pixel. It can be operated in a full frame mode and in a frame store mode. The pixel size is 50 micrometers by 50 micrometers . The active area is then 12.8 by 12.8 mm2. Cooled down to -90 degrees C the electronic noise floor is below 5 electrons at 50 Megapixel per second. Quantum efficiency measurements will be shown as well as the physical models of the radiation entrance window. A camera system with comparable specifications - except for the pixel size - was already fabricated for ESA's XMM-NEWTON satellite mission, which was launched in early December 1999. The active size of the detector is 60 by 60 mm2 with a readout time of 4 ms. Future work includes the extension of the active area to 1000 by 1000 pixel, monolithically fabricated on a high resistivity 6 inch silicon wafer. The main driver for this development is ESA's planned XEUS mission, to be launched at the end of the next decade.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lothar Strueder, Robert Hartmann, Peter Holl, Josef Kemmer, Norbert Krause, Peter Lechner, Gerhard Lutz, Norbert Meidinger, Rainer H. Richter, Heike Soltau, Joachim E. Truemper, Christoph von Zanthier, "High-speed pn-CCDs as imaging detectors from 200 to 1200 nm", Proc. SPIE 4008, Optical and IR Telescope Instrumentation and Detectors, (16 August 2000); doi: 10.1117/12.395494; https://doi.org/10.1117/12.395494
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