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18 July 2000 Characteristics around oxygen and silicon K absorption edges of a charge-coupled device
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Abstract
We measure various spectral response characteristics around the oxygen and silicon K absorption edges of a Charge- Coupled Device X-ray detector used in the X-ray Imaging Spectrometer developed for the ASTRO-E mission. We have evaluated X-ray Absorption Fine Structure (XAFS) around oxygen K edge in detail. A strong absorption peak of 45% is confirmed just above the oxygen K edge and an oscillatory structure follows whose amplitude decreases from 20% at the edge to less than 1% at 0.9 keV. We also show XAFS and discuss on a change of the response function around the silicon K edge. The discontinuity of the signal pulse height at the silicon K edge is less than 1.8 eV. We determine the thickness of silicon, silicon dioxide, and silicon nitride in the dead layer using the depth of the absorption edge.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kouji Mori, Makoto Shouho, Haruyoshi Katayama, Shunji Kitamoto, Hiroshi Tsunemi, Kiyoshi Hayashida, Emi Miyata, Motoari Ohta, Takayoshi Kohmura, Katsuji Koyama, Mark W. Bautz, Richard F. Foster, and Steven E. Kissel "Characteristics around oxygen and silicon K absorption edges of a charge-coupled device", Proc. SPIE 4012, X-Ray Optics, Instruments, and Missions III, (18 July 2000); https://doi.org/10.1117/12.391590
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