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18 July 2000 Multichannel silicon drift detectors for x-ray spectroscopy
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Abstract
Silicon Drift Detectors (SDDs) with integrated readout transistor combine a large sensitive area with a small value of the output capacitance and are therefore well suited for high resolution, high count rate X-ray spectroscopy. The low leakage current level obtained by the elaborated process technology makes it possible to operate them at room temperature or with moderate cooling. The monolithic combination of a number of SDDs to a Multichannel Drift Detector solves the limitation in size of the single device and allows the realization of new physics experiments and systems. The description of the device principle is followed by the introduction of the Multichannel Drift Detector concept. Layout, performance, and examples of current and future applications are given.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Lechner, Werner Buttler, Carlo Fiorini, Robert Hartmann, Josef Kemmer, Norbert Krause, Paolo Leutenegger, Antonio Longoni, Heike Soltau, Diana Stoetter, R. Stoetter, Lothar Strueder, and Ulrich Weber "Multichannel silicon drift detectors for x-ray spectroscopy", Proc. SPIE 4012, X-Ray Optics, Instruments, and Missions III, (18 July 2000); https://doi.org/10.1117/12.391596
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