29 December 1999 Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography
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Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373626
Event: Photonics Prague '99, 1999, Prague, Czech Republic
New results on the studied of photo- and electron beam induced changes in solubility of amorphous As-S-Se and As2S3 thin films are reviewed. It is shown that amorphous chalcogenide semiconductor resist can be applied in holography and the fabrication of diffractive optical elements by electron beam lithography is possible.
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Janis Teteris, Janis Teteris, Timo Jaeaeskelaeinen, Timo Jaeaeskelaeinen, Jari Pekka Turunen, Jari Pekka Turunen, K. Jefimov, K. Jefimov, } "Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373626; https://doi.org/10.1117/12.373626

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