29 December 1999 Collective resonance and form factor of homogeneous broadening in semiconductors
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Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373654
Event: Photonics Prague '99, 1999, Prague, Czech Republic
Abstract
The concept of resonant carrier many body interaction during radiative recombination was applied to explain spectra of quantum well electroluminescence at 77 K. Extremely good agreement of the calculated and experimental spectra in the entire range of emission has been achieved. Estimations give a sub-picosecond characteristic time of such radiation process.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonid Ya. Karachinsky, Leonid Ya. Karachinsky, Nikita Yu. Gordeev, Nikita Yu. Gordeev, Vladimir I. Kopchatov, Vladimir I. Kopchatov, Petr S. Kop'ev, Petr S. Kop'ev, Innokenty I. Novikov, Innokenty I. Novikov, Nikita A. Pikhtin, Nikita A. Pikhtin, Ilya S. Tarasov, Ilya S. Tarasov, Sergey V. Zaitsev, Sergey V. Zaitsev, "Collective resonance and form factor of homogeneous broadening in semiconductors", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373654; https://doi.org/10.1117/12.373654
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