Low-voltage Q switching of diode-pumped Er:Yb:glass laser by a BBO Pockels cell

Alain M. Chardon; Ilan Grave; Joel Falk

doi:10.1117/12.373639

29 December 1999 Low-voltage Q switching of diode-pumped Er:Yb:glass laser by a BBO Pockels cell

Alain M. Chardon, Ilan Grave, Joel Falk

Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373639
Event: Photonics Prague '99, 1999, Prague, Czech Republic

Abstract

Seeded Q-switched pulsing in a diode-pumped Er-Yb glass laser has been experimentally demonstrated. The Q-switch is a beta-barium borate Pockels cell. The voltage applied to the BBO is much lower than the voltage needed to hold off the laser. This allows low-power, free-running lasing to seed the Q-switched laser-pulse. Q-switched operation is accomplished with a reduction by a facto of 5 to 8 below the full hold-off voltage. Measurements on this system also allows an estimation of the time of the energy transfer between Yb and Er ions.

Citation Download Citation

Alain M. Chardon, Ilan Grave, and Joel Falk "Low-voltage Q switching of diode-pumped Er:Yb:glass laser by a BBO Pockels cell", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373639

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