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29 December 1999 Reduction of absorption loss in silica-on-silicon channel waveguides fabricated by low-temperature PECVD process
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Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373601
Event: Photonics Prague '99, 1999, Prague, Czech Republic
Abstract
This study is focused on the low temperature plasma enhanced chemical vapor deposition technique used for fabrication of silica based optical waveguides on silicon, utilizing nitrous oxide as an oxidant for both silane and dopant. Fabricated channel waveguide shows total insertion loss of 1.2 dB at 1.55 micrometers , and no absorption peaks associated with N-H and Si-H bonds around 1.5 micrometers have been observed in the as deposited material. This fabrication technology adds flexibility to the monolithic integration of electronic and optical components. Using this technology, a n umber of different couplers based on multimode interference technique have been investigated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jayanta K. Sahu, Lech Wosinski, and Harendra Fernando "Reduction of absorption loss in silica-on-silicon channel waveguides fabricated by low-temperature PECVD process", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373601
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