A new method of self-calibration of the emissive power of an emissive diode is presented here. The method involves a determination of the overall quantity of the thermal and emissive power released in a semiconductor-type radiating structure in the non-steady-state mode. According to a preliminary analysis it is characterized by satisfactory metrological characteristics.
L. S. Lovinsky,
"Reproduction of emissive power (self-calibration) using an emissive diode", Proc. SPIE 4018, Optoelectronic Metrology, (13 December 1999); doi: 10.1117/12.373725; https://doi.org/10.1117/12.373725