10 April 2000 Signal processing electronics for a capacitive microsensor
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Proceedings Volume 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS; (2000) https://doi.org/10.1117/12.382282
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS, 2000, Paris, France
Abstract
An interface circuit in a 0.8-micrometers CMOS process for the on- chip integration of a capacitive micro-sensor used as a microphone is presented. In order to circumvent 1/f noise contributions and to improve the signal/noise ratio, a synchronous modulation-demodulation technique has been applied. For the implementation of this technique, we have studied and designed several functional block, such as modulator with signal conversion, low-noise amplifier, demodulator, etc. To deal with problems related to dispersion of intrinsic capacitance of the sensor, a feedback compensating solution is suggested. The designed circuit has a sensibility of 1200 V/pF, with a minimum detectable capacitance variation of 2 10-6 pF.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilles Amendola, Gilles Amendola, Guo Neng Lu, Guo Neng Lu, } "Signal processing electronics for a capacitive microsensor", Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); doi: 10.1117/12.382282; https://doi.org/10.1117/12.382282
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