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17 July 2000 Linear arrays of fast uncooled poly-SiGe microbolometers for IR detection
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Abstract
Polycrystalline Silicon Germanium is a useful material for CMOS compatible uncooled IR bolometer manufacturing due to its excellent material characteristics such as low stress and high TCR. However, for IR imaging applications, fast and yet sensitive detectors are required. We managed to combine these two contrasting characteristics by fabricating very thin devices. This was only possible thanks to a new release technique based on vapor HF at elevated wafer temperatures, and to structural stiffness enhancement of the devices by applying U-profiles. Furthermore, a performant and low cost on-chip vacuum package has been developed. The combination of these features is applied in linear arrays of bolometers which are read-out by a dedicated noise reduction circuit using an MCM board.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piet De Moor, Joachim John, Sherif Sedky, and Chris A. Van Hoof "Linear arrays of fast uncooled poly-SiGe microbolometers for IR detection", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391754
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