Paper
17 July 2000 Room temperature 640x512 pixel near-infrared InGaAs focal plane array
Martin H. Ettenberg, Michael J. Lange, Matthew T. O'Grady, Jacobus S. Vermaak, Marshall J. Cohen, Gregory H. Olsen
Author Affiliations +
Abstract
We report on the performance of a 640 X 512 pixel, indium gallium arsenide (In53Ga47As) focal plane array (FPA). The device has 25 micrometer pixels and represents the largest and finest pitched imager demonstrated in this material system. The device is sensitive to the 0.9 micrometer-to-1.7 micrometer short wave infrared band and features a room temperature detectivity, D*, greater than 5 X 1012 cm- (root)Hz/W with greater than 98% of the pixels operable. The performance of the In53Ga47As photodiode array is such that at room temperature the focal plane array is read noise- limited. The presentation will include a description of the FPA fabrication and assembly as well as characterization of dark current versus temperature, spectral response, and resolution. The implications of these results to applications such as passive night vision imaging, active illumination, covert surveillance, target designation using eye safe lasers, and target acquisition and tracking will be discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin H. Ettenberg, Michael J. Lange, Matthew T. O'Grady, Jacobus S. Vermaak, Marshall J. Cohen, and Gregory H. Olsen "Room temperature 640x512 pixel near-infrared InGaAs focal plane array", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391733
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CITATIONS
Cited by 13 scholarly publications.
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KEYWORDS
Staring arrays

Indium gallium arsenide

Photodiodes

Cameras

Indium

Short wave infrared radiation

Silicon

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