Above-GaAs-band-gap reflection modulator

Mary S. Tobin; John D. Bruno; John T. Pham

doi:10.1117/12.391900

18 July 2000 Above-GaAs-band-gap reflection modulator

Mary S. Tobin, John D. Bruno, John T. Pham

Proceedings Volume 4042, Enabling Photonic Technologies for Aerospace Applications II; (2000) https://doi.org/10.1117/12.391900
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

Multiple triple quantum wells (TQWs) are used in the active region of an AlGaAs p-i-n diode for a reflection modulator operating above the GaAs band gap. Photocurrent spectra of the TQW-based diode show sharp absorption features that retain their spectral character with reverse bias and show large Stark shifts--comparable to those obtained from alternative active-layer designs. Some performance characteristics of an 810-nm reflection modulator using the TQW active-layer design are presented. We also describe time-resolved pump/probe measurements made on a series of TQW-based p-i-n diodes with differing p-layer conductivity and contrast results with the predictions of a simplified model of the carrier dynamics.

Citation Download Citation

Mary S. Tobin, John D. Bruno, and John T. Pham "Above-GaAs-band-gap reflection modulator", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); https://doi.org/10.1117/12.391900

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available