18 July 2000 Above-GaAs-band-gap reflection modulator
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Abstract
Multiple triple quantum wells (TQWs) are used in the active region of an AlGaAs p-i-n diode for a reflection modulator operating above the GaAs band gap. Photocurrent spectra of the TQW-based diode show sharp absorption features that retain their spectral character with reverse bias and show large Stark shifts--comparable to those obtained from alternative active-layer designs. Some performance characteristics of an 810-nm reflection modulator using the TQW active-layer design are presented. We also describe time-resolved pump/probe measurements made on a series of TQW-based p-i-n diodes with differing p-layer conductivity and contrast results with the predictions of a simplified model of the carrier dynamics.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary S. Tobin, John D. Bruno, and John T. Pham "Above-GaAs-band-gap reflection modulator", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); doi: 10.1117/12.391900; https://doi.org/10.1117/12.391900
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