18 July 2000 High-power mid-IR type-II interband cascade lasers
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Abstract
Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions for serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometers ; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 /A/cm2 at 80 K) and power efficiency exceeding 9% were observed from a mesa- stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and 127 K in cw mode. We observed from several devices at temperatures above 80 K, slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%. A peak optical output power of approximately 6 W/facet was observed from a type-II IC laser at 80 K.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John D. Bruno, Rui Q. Yang, John L. Bradshaw, John T. Pham, and Donald E. Wortman "High-power mid-IR type-II interband cascade lasers", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); doi: 10.1117/12.391912; https://doi.org/10.1117/12.391912
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