Modulation-doped InGaAsP QW laser emitting at 1.55 um

Niloy Choudhury; Niloy K. Dutta

doi:10.1117/12.391903

18 July 2000 Modulation-doped InGaAsP QW laser emitting at 1.55 μm

Niloy Choudhury, Niloy K. Dutta

Proceedings Volume 4042, Enabling Photonic Technologies for Aerospace Applications II; (2000) https://doi.org/10.1117/12.391903
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise in modulation-doped InGaAsP QW laser emitting at 1.55 micrometers have been theoretically investigated. The results indicate that the relaxation oscillation frequency for p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of p-type modulation doped QW laser is reduced to 1/5 of that of undoped MQW laser and the relative intensity noise is reduced by a factor of > 10 dB compared to that for undoped MQW lasers.

Citation Download Citation

Niloy Choudhury and Niloy K. Dutta "Modulation-doped InGaAsP QW laser emitting at 1.55 μm", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); https://doi.org/10.1117/12.391903

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