Paper
18 July 2000 Multiwavelength generation at 1.55 μm from an external cavity semiconductor laser
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Abstract
Optical analog to digital conversion schemes require a sampling source of high repetition rate, low temporal jitter, low amplitude noise, and short pulse duration to achieve the desired sampling rate and number of bits of resolution. We report on the development of an actively mode-locked semiconductor external cavity laser system where the emission is comprised of multiple wavelengths nominally centered around 1.55 microns. Cavity design includes an intra-cavity grating to produce a spatially dispersed optical spectral filtering plane. Amplitude filtering in this spectral plane serves to flatten the effective gain and a rectangular aperture array selects those wavelengths which are allowed to lase. Modelocked at 311 MHz and producing 8 spectral lines, the laser provides a sampling rate of approximately 2.5 GHz. Temporal interleaving of the pulse train by factor 4 increases the sampling rate to 10 GHz.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric D. Park, Joseph H. Abeles, Alan Braun, and Peter J. Delfyett Jr. "Multiwavelength generation at 1.55 μm from an external cavity semiconductor laser", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); https://doi.org/10.1117/12.391897
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Oscillators

Semiconductor lasers

Optical amplifiers

Mirrors

Optical fibers

Optical filters

Filtering (signal processing)

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