6 September 2000 Investigating the ferroelectric field effect in thin NdBa2Cu3O7 films using the Hall effect
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Abstract
We have used the reversible ferroelectric polarization of the perovskite oxide Pb(Zr0.2Ti0.8)O3 in Pb(Zr0.2Ti0.8)O3/Nd1.13Ba1.87Cu3O7-δ epitaxial heterostructures in order to electrostatically modulate the carrier concentration in thin Nd1.13Ba1.87Cu3O7 films via the ferroelectric field effect. For 100 angstrom thick Nd1.13Ba1.87Cu3O7 layers, we observe a correlated change in the normal state resistance and in the inverse Hall constant.
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S. Gariglio, C. H. Ahn, Jean-Marc Triscone, "Investigating the ferroelectric field effect in thin NdBa2Cu3O7 films using the Hall effect", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); doi: 10.1117/12.397848; https://doi.org/10.1117/12.397848
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