28 December 1999 Fractal modeling of porous semiconductors
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Proceedings Volume 4060, New Trends in Atomic and Molecular Spectroscopy; (1999) https://doi.org/10.1117/12.375283
Event: New Trends in Atomic and Molecular Spectroscopy, 1999, none, Russian Federation
Abstract
In the present paper it is shown that one can present the porous semiconductor as a set of clusters of silicon atoms surrounded by SiOx, as well as the single crystalline silicon substrate can be considered as an infinite cluster also. The formulae for the estimation of variable porosity of the material (including the value of critical porosity-- the percolation threshold, after which the characteristic phenomena are expected in porous silicon) and the forbidden bandgap value of clusters are suggested as functions of the sizes of nanocrystallites. A new fractal model of pore creation on the surface of a material is proposed also. The cases of semi-spherical, conical (V-groove dielectric isolation technology) and cylindrical (U-groove dielectric isolation technology) are considered. Formulae for the formed surface area S, material porosity p as a function of the depth and fractal dimension are obtained.
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Vladimir M. Aroutiounian, Vladimir M. Aroutiounian, Mher Zh. Ghoolinian, Mher Zh. Ghoolinian, } "Fractal modeling of porous semiconductors", Proc. SPIE 4060, New Trends in Atomic and Molecular Spectroscopy, (28 December 1999); doi: 10.1117/12.375283; https://doi.org/10.1117/12.375283
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