25 January 2000 Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis
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Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000); doi: 10.1117/12.375442
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation
Abstract
The element sensitivity factors method and the factor analysis are the most important methods for quantification of Auger depth profiles. The present paper puts forward a criterion for the decision in which cases the use of factor analysis is necessary for the quantification. The presented criterion uses the fact, that changed chemical bonds via sample depth are connected with changed element sensitivity factors. A chosen SiC-Si sample was investigated by Target Factor Analysis. The influence of data pretreatment like data selection, normalization and filtering are discussed.
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Ralf Pieterwas, Rastislav Kosiba, Gernot Ecke, Joerg Pezoldt, Hans Roessler, "Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375442; https://doi.org/10.1117/12.375442
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KEYWORDS
Silicon carbide

Silicon

Factor analysis

Chemical elements

Error analysis

Interfaces

Oxygen

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