25 January 2000 Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation
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Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000) https://doi.org/10.1117/12.375445
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation
Abstract
The fundamental processes that occur when SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to synthesize buried layers of (SiC)x(AlN)1-x have been investigated. The influence of the mechanical stress induced by formed clusters of interstitials has been taken into account by adding a special term to the expression of current density of defects in the set of differential equations. The satisfactory agreement of simulation results and experimental data is obtained. The theoretical treatment has enabled one to determine the role of internal stress field on the evolution of defect distribution.
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Peter V. Rybin, Peter V. Rybin, Dmitri V. Kulikov, Dmitri V. Kulikov, Yuri V. Trushin, Yuri V. Trushin, J. Petzoldt, J. Petzoldt, Rossen A. Yankov, Rossen A. Yankov, } "Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375445; https://doi.org/10.1117/12.375445
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