25 January 2000 Single-electron transport through the Anderson center on Si(100) surface
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Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000) https://doi.org/10.1117/12.375416
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation
Abstract
We present the findings of single-electron transport through the Ag-related center as a quantum dot weakly coupled by tunneling junctions with the silicon quantum wire which is formed at the Si (100) surface by the crystallographically- oriented chain of the adsorbed silver atoms. The quantum dot of this art is shown to be variable thereby demonstrating the quantum staircase in forward bias and to change a position as a function of charge states revealed by the Coulomb single-electron charging in reverse bias. The effects observed seem to be due to a field-dependent asymmetry of the barriers isolating the Ar-related center from the silicon quantum wire.
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Nikolai T. Bagraev, Nikolai T. Bagraev, Alexei D. Bouravleuv, Alexei D. Bouravleuv, Leonid E. Klyachkin, Leonid E. Klyachkin, Anna M. Malyarenko, Anna M. Malyarenko, Valery M. Mikoushkin, Valery M. Mikoushkin, Serguei Yu. Nikonov, Serguei Yu. Nikonov, Serguei A. Rykov, Serguei A. Rykov, } "Single-electron transport through the Anderson center on Si(100) surface", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375416; https://doi.org/10.1117/12.375416
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