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16 August 2000 Laser processing of siliceous materials
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Proceedings Volume 4065, High-Power Laser Ablation III; (2000) https://doi.org/10.1117/12.407354
Event: High-Power Laser Ablation, 2000, Santa Fe, NM, United States
Abstract
Laser processing of siliceous materials becomes increasingly important. Analogous to the laser processing of conventional materials there are applications in the fields of cleaning, surface processing, cutting, etc. The present paper concerns the state of the art and new applications: (1) Laser cleaning of natural stone surfaces. The good disability allows restoration work to be carried out conveniently, as for example the complete removal of crusts or the removal to such degree that moisture is not trapped beneath. (2) Non-slip finish of polished natural stone surfaces: The excellent focusing of laser beams on spots as small as 100 micrometer and below can be exploited to produce macroscopically invisible structures on the surfaces of different materials. This permits microscopically small craters and lentil shaped depressions to be generated on the stone surface. Therefore it is possible to provide a non-slip finish to polished natural stone surfaces without noticeably impairing the gloss. (3) Concrete cutting: In Europe, and particularly in Germany, there is a growing demand for redevelopment of concrete apartment buildings, involving the removal of non-bearing walls and the cutting of openings. The temporal relocation of residents due to the noise and moisture from the use of diamond tools could be avoided by applying a laser cutting technology. With a 3 kW-Nd-YAG-laser, 70 mm concrete can be cut with rates up to 25 mm/min.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Panzner, Andreas Lenk, Guenter R. Wiedemann, Jan Hauptmann, Hans Juergen Weiss, Thomas Ruemenapp, Lothar Morgenthal, and Eckhard Beyer "Laser processing of siliceous materials", Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); https://doi.org/10.1117/12.407354
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