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16 August 2000 Reactive pulsed laser deposition assisted by rf discharge plasma
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Proceedings Volume 4065, High-Power Laser Ablation III; (2000) https://doi.org/10.1117/12.407326
Event: High-Power Laser Ablation, 2000, Santa Fe, NM, United States
Abstract
AlN nitride films are grown by reactive pulsed laser ablation of aluminum target in N2 atmosphere. The influence of process parameters such as N2 pressure and laser fluence is investigated. Films are characterized by Rutherford Backscattering Spectroscopy, Nuclear Reaction Analysis, X Ray Diffraction and X Ray Photoelectron Spectroscopy. O contamination appears in the film and its origin is discussed. To enhance N2 dissociation, a RF discharge device is coupled to the deposition chamber. Its effect on thin film composition is studied. Emission spectroscopy is performed in order to find the best RF working point for N2 molecule dissociation and to understand species transport from the target towards the substrate as a function of process parameters. Thin film with a stoichiometry near to Al1N1 can be obtained with low O contamination working with 6 J/cm2 laser fluence, 0.01 mbar N2 with RF discharge added.
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Armelle Basillais, Jacky Mathias, Chantal Boulmer-Leborgne, and Jacques Perriere "Reactive pulsed laser deposition assisted by rf discharge plasma", Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); https://doi.org/10.1117/12.407326
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