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19 July 2000 150-nm mask fabrication using thin ZEP 7000 resist, GHOST, and dry etch for the MEBES 5000 pattern generator
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392061
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
Advanced reticle specifications for critical dimension control (CD) and CD linearity of 150 nm generation devices requires significant improvements to the mask making process. ZEP 7000 is an e-beam resist that exhibits good contrast properties and acceptable dry etch resistance while maintaining superior lithographic quality. In this paper, an advanced process utilizing thin ZEP 7000 resist and ICP will be described. The combination of these two unit processes describes a factor space in mask making that is acceptable for the production of masks that meet the 150 nm ITRS roadmap requirements.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Myung Yong Kim, Jong-Hwa Lee, Young Jin Yoon, and Boo-Yeon Choi "150-nm mask fabrication using thin ZEP 7000 resist, GHOST, and dry etch for the MEBES 5000 pattern generator", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392061
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