19 July 2000 Advanced FIB mask repair technology in ArF lithography
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392089
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
New ion beam column was used for mask repair. The ion irradiation was 15pA for the probe current and 31nm for the pixel size. The imaging damage was evaluated from the optical intensity value with MSM193. Optical intensity have the change within 5 percent in case of the repetition image in scanning until five times. The carbon film was formed with a new hydrocarbon gas which change into the pyrene. It is a film that the halo is small and the optical density is about three times higher. The durability to the ArF laser of the carbon film was done by method of measuring the transmittance with MPM193. The carbon film has the durability that exchange in the transmittance is within 0.3 percent by ArF laser irradiation of 30KJ cm-2. The program defects formed to the L and S pattern was repaired by these new conditions. The repaired pattern was printed with ArF scanner on the wafer. The reported pattern was not transferred defect on the wafer.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Hiruta, Koji Hiruta, Shinji Kubo, Shinji Kubo, Hiroaki Morimoto, Hiroaki Morimoto, Anto Yasaka, Anto Yasaka, Ryoji Hagiwara, Ryoji Hagiwara, Tatsuya Adachi, Tatsuya Adachi, Yasutaka Morikawa, Yasutaka Morikawa, Kazuya Iwase, Kazuya Iwase, Naoya Hayashi, Naoya Hayashi, } "Advanced FIB mask repair technology in ArF lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392089; https://doi.org/10.1117/12.392089


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