19 July 2000 Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392069
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
As a result of aggressive line width shrinking of semiconductor devices in the recent years, the requirements for advanced reticles are getting more and more stringent. Therefore, it is beneficial to consider increasing the reduction ratio of projection optics in order to relax the reticle tolerances. This paper discusses quantitatively the reticle, CD, DOF and overlay accuracy requirement listed in the 1999 International Technology Roadmap for Semiconductor (ITRS) roadmap. Our simulation suggests mask drawing accuracy needs to be further improved for better CD control accuracy. Increasing reduction ratio to 6x is also another way to meet the line width requirement. Productively enhancement with 6x reduction in comparison to 4x reduction ratio is also shown.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenichi Kotoku, Kenichi Kotoku, Koichi Mikami, Koichi Mikami, Ryuichi Ebinuma, Ryuichi Ebinuma, Yuichi Yamada, Yuichi Yamada, Yuan Zhang, Yuan Zhang, } "Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392069; https://doi.org/10.1117/12.392069


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