19 July 2000 Applications of MICP source for next-generation photomask process
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392028
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
As critical dimensions of photomask extends into submicron range, critical dimension uniformity, edge roughness, macro loading effect, and pattern slope become tighter than before. Fabrication of photomask relies on the ability to pattern features with anisotropic profile. To improve critical dimension uniformity, dry etcher is one of the solution and inductively coupled plasma (ICP) sources have become one of promising high density plasma sources for dry etcher. In this paper, we have utilized dry etcher system with multi-pole ICP source for Cr etch and MoSi etch and have investigated critical dimension uniformity, slope, and defects. We will present dry etch process data by process optimization of newly designed dry etcher system. The designed pattern area is 132 by 132 mm2 with 23 by 23 matrix test patterns. 3 (sigma) of critical dimension uniformity is below 12 nm at 0.8 - 3.0 micrometers . In most cases, we can obtain zero defect masks which is operated by face- down loading.
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Hyuk-Joo Kwon, Hyuk-Joo Kwon, Byung-Soo Chang, Byung-Soo Chang, Boo-Yeon Choi, Boo-Yeon Choi, Kyung Ho Park, Kyung Ho Park, Soo-Hong Jeong, Soo-Hong Jeong, "Applications of MICP source for next-generation photomask process", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392028; https://doi.org/10.1117/12.392028


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