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19 July 2000 CAR blanks feasibility study results
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392064
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
The rise of a high acceleration voltage E-beam exposure tool has created a growing need for a chemically amplified resist system with high sensitivity, high contrast, superior resolution, superior PCD and PED stability. While mask- makers have been procuring resist coated blanks, it is generally considered that CARs must be spun on just prior to exposure due to its very short life after coating. However, it is general intention in the industry to stay in the same manner even with CARs for the next generation, which is the mission of blanks supplier also. In order to study feasibility for CARs coated blanks supply, we started screening CARs that were commercially available at present by patterning evaluation especially for PCD stability. We first tried to establish PSB and PEB optimization technique for CARs by using a benchmark resist of RE-5153P. We also tried to establish a stress tests for PCD stability by using NH3 gas and dry-N2 gas mixture. Then, we did comparative evaluation in patterning performance such as sensitivity, contrast, resolution, process latitude, PED and PCD stability among RE-5153P, EP-009, TLE-011, UVIIHS and others. ZEP7000 was also examined as another benchmark, which was the most popular resist at present for advanced EB reticle fabrication in the industry. This paper describes chemically amplified resist feasibility study result especially for blanks supply for the next generation e-beam reticle fabrication.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunori Yokoya, Hideo Kobayashi, Masahiro Hashimoto, Fumiko Ota, and Keishi Asakawa "CAR blanks feasibility study results", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392064
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