19 July 2000 Characteristics of CD measurement equipment
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392074
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Shrinking device design rule, lithography requires more rigid CD accuracy on a mask. In most cases, cross sectional profiles are not uniformed on a chromium mask. Cross sectional profiles influence not only CD value but also aerial image on wafer. Suitable CD value for lithography is the same influenced one as aerial image. Therefore we studied this influence, and evaluated which CD value is suitable for lithography. As our results, CD result of DUV microscope is most suitable for 0.13 and 0.15 micrometers lithography.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane, Takeshi Yamane, Takashi Hirano, Takashi Hirano, } "Characteristics of CD measurement equipment", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392074; https://doi.org/10.1117/12.392074


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