19 July 2000 Comparative study on MEEF and dose latitude between attenuated PSM and Cr binary masks
Author Affiliations +
Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392034
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
Abstract
As the feature size shrinks dramatically, it is essential to use low-kl factor for minimum resolution under present optical technology. However, low kl causes the increase of the mask error enhancement factor (MEEF), which means that the wafer CD error transferred form mask CD error will be amplified non-linearity. This MEEF becomes one of the most critical issues in depth of focus (DOF) and an exposure latitude. This paper confirms that a small MEEF and better dose latitude is achievable if an attenuated phase shift mask is combined with a n optimal off axis illumination condition because the image contrast on wafer can be improved by reducing the magnitude difference between the zeroth order and the first order. This improvement is more noticeable especially in contact hole patterns. And it is confined that the choice of optimal intensity threshold is critical to MEEF, according to the dose error enhancement factor results for various resist thresholds. In conclusion, a smaller MEEF is obtained by combination of OAI and att. PSM and by choosing optimal intensity threshold on this low K1 lithography regime.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyun Joon Cho, Yong-Hoon Kim, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn, "Comparative study on MEEF and dose latitude between attenuated PSM and Cr binary masks", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392034; https://doi.org/10.1117/12.392034
PROCEEDINGS
7 PAGES


SHARE
Back to Top